DESCRIPTION

· DDR4 SDRAM with 4Gb (x16) capacity

· High-speed dynamic random-access memory

· Internally organized with eight banks (2 bank groups each with 4 banks)

· Utilizes 8n prefetch architecture for high-speed operation

· Supports burst-oriented read and write operations

· Requires predefined power-up and initialization sequence

FEATURES

· JEDEC Standard Compliant

· Fast clock rate: 1333/1600MHz

· Power supplies: VDD & VDDQ = +1.2V ± 0.06V, VPP = +2.5V -0.125V / +0.25V

· Operating temperature range: Extended Test (0~95°C), Industrial (-40~95°C), Automotive (-40~105°C)

· Supports JEDEC clock jitter specification

· Bidirectional differential data strobe (DQS & DQS#)

· Differential Clock (CK & CK#)

· 8 internal banks: 2 groups of 4 banks each

· Separated IO gating structures by Bank Group

· 8n-bit prefetch architecture

· Precharge & Active power down

· Auto Refresh and Self Refresh

· Low-power auto self refresh (LPASR)

· Self Refresh Abort

· Fine Granularity Refresh

· Write Leveling

· DQ Training via MPR

· Programmable preamble (1tCK and 2tCK mode)

· Command/Address (CA) Parity

· Data bus write cyclic redundancy check (CRC)

· Boundary Scan Mode

· Internal VREFDQ Training

· Read Preamble Training

· Control Gear Down Mode

· Per DRAM Addressability (PDA)

· Output Driver Impedance Control

· Dynamic ODT (RTT_PARK & RTT_Nom & RTT_WR)

· Input Data Mask (DM) and Data Bus Inversion (DBI)

· ZQ Calibration

· Command/Address latency (CAL)

· Asynchronous Reset

· DLL enable/disable

· Burst Length (BL8/BC4/BC4 or 8 on the fly)

· Burst type: Sequential / Interleave

· CAS Latency (CL)

· CAS Write Latency (CWL)

· Additive Latency (AL): 0, CL-1, CL-2

· Average refresh period: 8192 cycles/64ms (7.8us at -40°C ≦ TC ≦ +85°C), 8192 cycles/32ms (3.9us at +85°C ≦ TC ≦ +95°C), 8192 cycles/16ms (1.95us at +95°C ≦ TC ≦ +105°C)

· Data Interface: Pseudo Open Drain (POD)

· RoHS compliant

· Hard post package repair (hPPR)

· Soft post package repair (sPPR)

· 96-ball 7.5 x 13 x 1.2mm FBGA package - Pb and Halogen Free

APPLICATIONS

· High-speed memory solutions for computing systems

· Embedded systems requiring reliable DRAM

· Automotive electronics with extended temperature range

· Industrial applications with robust memory requirements

· Consumer electronics with high-performance memory needs