DESCRIPTION

· 8Gb (x16) DDR4 Synchronous DRAM with 512M x 16-bit organization.

· High-speed dynamic random-access memory with eight internal banks (2 bank groups, each with 4 banks).

· Utilizes 8n prefetch architecture for high-speed operation, transferring two data words per clock cycle at I/O pins.

· Burst-oriented read/write operations with burst lengths of eight or four, starting at a selected location.

· Requires predefined power-up and initialization sequence for normal operation.

FEATURES

· JEDEC standard compliant with fast clock rates of 1333/1600MHz.

· Power supplies: VDD & VDDQ = +1.2V ± 0.06V, VPP = +2.5V -0.125V / +0.25V.

· Extended operating temperature ranges: ET (0~95°C), IT (-40~95°C), AT (-40~105°C).

· Supports JEDEC clock jitter specification, bidirectional differential data strobe (DQS & DQS#), and differential clock (CK & CK#).

· Features include 8n-bit prefetch architecture, precharge & active power down, auto refresh, self refresh, low-power auto self refresh (LPASR), and fine granularity refresh.

· Additional features: write leveling, DQ training via MPR, command/address (CA) parity, data bus write cyclic redundancy check (CRC), boundary scan mode, internal VREFDQ training, read preamble training, control gear down mode, per DRAM addressability (PDA), output driver impedance control, dynamic ODT (RTT_PARK & RTT_Nom & RTT_WR), input data mask (DM) and data bus inversion (DBI), ZQ calibration, command/address latency (CAL), asynchronous reset, DLL enable/disable, burst length (BL8/BC4/BC4 or 8 on the fly), burst type: sequential/interleave, CAS latency (CL), CAS write latency (CWL), additive latency (AL): 0, CL-1, CL-2, average refresh period, data interface: pseudo open drain (POD), RoHS compliant, hard post package repair (hPPR), soft post package repair (sPPR).

· 96-ball 7.5 x 13 x 1.2mm FBGA package, Pb and Halogen Free.

APPLICATIONS

· Suitable for high-speed data processing and storage applications.

· Ideal for use in industrial, automotive, and extended temperature range environments.

· Applications requiring low-power auto self refresh (LPASR) and fine granularity refresh.

· Suitable for systems requiring advanced features like write leveling, DQ training, and command/address parity.

· Ideal for applications needing robust data integrity features such as cyclic redundancy check (CRC) and boundary scan mode.

· Suitable for use in RoHS compliant and environmentally friendly designs.