Insignis Technology Corporation NDS73PT9-16ET

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  • Part Number:

    NDS73PT9-16ET

  • Manufacturer:

    Insignis Technology Corporation

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf NDS73PT9-16ET_Datesheet

  • Description:

    SDR 128MB X32 TSOPII 86L 10X22(X

  • In stock 108
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Specifications
Type
Paramete
Type
Paramete
Clock Frequency
166 MHz
Supplier Device Package
86-TSOP II
Mounting Type
Surface Mount
Technology
SDRAM
Package / Case
86-TFSOP (0.400", 10.16mm Width)
Voltage - Supply
3V ~ 3.6V
Memory Organization
4M x 32
Memory Format
DRAM
Operating Temperature
0°C ~ 70°C (TA)
Write Cycle Time - Word, Page
-
Grade
-
Memory Type
Volatile
Memory Interface
LVTTL
Access Time
-
Memory Size
128Mbit
Qualification
-
Overview

DESCRIPTION



· The 128Mb SDRAM is a high-speed CMOS synchronous DRAM with 128Mb capacity.

· Internally configured as quad 1M x 32 DRAM with a synchronous interface.

· Organized as 4096 rows by 256 columns by 32 bits per bank.

· Supports burst-oriented read and write accesses with programmable burst lengths.

· Features auto precharge and refresh functions for optimized performance.



FEATURES



· Fast access time: 5/5.4 ns.

· Fast clock rate: 200/166 MHz.

· Fully synchronous operation with internal pipelined architecture.

· Four internal banks (1M x 32-bit x 4 bank).

· Programmable Mode: CAS Latency, Burst Length, Burst Type.

· Burst stop function and individual byte control by DQM0-3.

· Auto Refresh and Self Refresh with 4096 refresh cycles/64ms.

· Single 3.3V ±0.3V power supply.

· Operating Temperature: Extended Test (0~70°C), Industrial (-40~85°C), Automotive (-40~105°C).

· Interface: LVTTL.

· Package: 86-pin 400 mil plastic TSOP II, 90-ball 8 x 13 x 1.2mm FBGA (Pb free and Halogen free).



APPLICATIONS



· Suitable for applications requiring high memory bandwidth.

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