DESCRIPTION

· LPDDR4 SDRAM with 2Gb/4Gb capacity, organized as 1 or 2 channels per device, each with 8 banks and 16 bits.

· Utilizes a double-data-rate architecture for high-speed operation, transferring two data words per clock cycle.

· Features a 2 or 4 clocks architecture on the Command/Address (CA) bus to minimize input pins.

FEATURES

· Compliant with JEDEC and AEC-Q100 standards.

· Supports fast clock rates up to 1600 MHz.

· Low-voltage operation with VDD1 at 1.8V, VDD2 and VDDQ at 1.1V.

· Wide operating temperature ranges: -25°C to 85°C (ET), -40°C to 85°C (IT), -40°C to 105°C (AT).

· On-Chip ECC for single-bit error correction per 64 bits, enhancing reliability.

· Configurable as x32 for 2 channels or x16 for 1 channel per device.

· Includes features like programmable READ/WRITE latencies, burst lengths, and dynamic ODT.

· Equipped with on-chip temperature sensors for self-refresh rate control and status monitoring.

· RoHS compliant, available in a 200-ball FBGA package.

APPLICATIONS

· Suitable for high-speed, low-power applications in automotive, industrial, and extended temperature environments.

· Ideal for systems requiring reliable memory solutions with error correction capabilities.

· Used in devices where compact, efficient memory architecture is critical.