DESCRIPTION

· LPDDR4 SDRAM with 2Gb/4Gb capacity, organized as 1 or 2 channels per device, each channel with 8 banks and 16 bits.

· Utilizes a double-data-rate architecture for high-speed operation, transferring two data words per clock cycle.

· Features a 16n prefetch architecture with internally pipelined data paths for high bandwidth.

· Employs a 2 or 4 clocks architecture on the Command/Address (CA) bus to minimize input pins.

FEATURES

· Compliant with JEDEC standards and AEC-Q100.

· Supports fast clock rates up to 1600 MHz.

· Low-voltage core and I/O power supplies: VDD1 (1.8V), VDD2 (1.1V), VDDQ (1.1V).

· Wide operating temperature range: -40°C to 105°C.

· On-Chip ECC for single-bit error correction per 64 bits.

· Configurable as x32 for 2 channels or x16 for 1 channel per device.

· Features include programmable read/write latencies, burst lengths, and output drive strength.

· Includes on-chip temperature sensor, dynamic ODT, and ZQ calibration.

· RoHS compliant, available in 200-ball FBGA package.

APPLICATIONS

· Suitable for high-performance mobile devices requiring low power consumption.

· Ideal for automotive applications needing robust performance under varying temperatures.

· Applicable in industrial environments demanding high reliability and durability.