DESCRIPTION

· The NV6125 is a thermally-enhanced version of the NV6115 650 V GaNFast™ power IC, optimized for high-frequency and soft-switching topologies.

· It features monolithic integration of FET, drive, and logic, creating a high-performance powertrain building block.

· The device allows designers to create efficient, compact, and fast integrated powertrains with high dV/dt immunity and low-inductance packaging.

FEATURES

· Thermally-enhanced design with a large cooling pad and improved thermals using CS resistor.

· Monolithically-integrated gate drive with a wide VCC range (10 to 30 V).

· Programmable turn-on dV/dt, 200 V/ns dV/dt immunity, and 800 V transient voltage rating.

· 650 V continuous voltage rating, low 175 mΩ resistance, and zero reverse recovery charge.

· ESD protection: 2 kV (HBM), 1 kV (CDM), and 2 MHz operation.

· Small, low-profile SMT QFN package (6 x 8 mm footprint, 0.85 mm profile) with minimized package inductance.

· RoHS, Pb-free, REACH-compliant, offering up to 40% energy savings compared to Si solutions.

· 20-year limited product warranty.

APPLICATIONS

· Suitable for AC-DC, DC-DC, and DC-AC topologies.

· Ideal for QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, and Class D applications.

· Used in wireless power, solar micro-inverters, LED lighting, TV SMPS, server, and telecom systems.