DESCRIPTION

· The GaNFast™ power IC integrates a high-performance eMode GaN FET with an integrated gate drive for high-frequency and high-efficiency operation.

· GaNSense™ technology provides real-time, accurate sensing of voltage, current, and temperature to enhance performance and robustness.

· The IC features integrated loss-less current sensing, eliminating the need for external current sensing resistors and increasing system efficiency.

· It includes short-circuit and over-temperature protection, along with auto-standby mode for improved efficiency at light or no-load conditions.

· The IC is designed for high dV/dt immunity, high-speed integrated drive, and low-profile, low-inductance SMT QFN packaging.

FEATURES

· Monolithically-integrated gate drive with a wide VCC range (10 to 30 V).

· Programmable turn-on dV/dt and 200 V/ns dV/dt immunity.

· 800 V Transient Voltage Rating and 700 V Continuous Voltage Rating.

· Low 260 mΩ resistance and zero reverse recovery charge.

· Operates up to 2 MHz with integrated loss-less current sensing.

· Short-circuit and over-temperature protection, with autonomous low-current standby mode.

· Small, low-profile SMT QFN package (5 x 6 mm footprint, 0.85 mm profile).

· RoHS, Pb-free, REACH-compliant with up to 40% energy savings compared to Si solutions.

· 20-year limited product warranty.

APPLICATIONS

· AC-DC, DC-DC, and DC-AC converters.

· QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, and Class D topologies.

· Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, and Telecom applications.