DESCRIPTION

· The GaNFast™ power IC integrates a high-performance eMode GaN FET with an integrated gate drive for high-frequency and high-efficiency operation.
· GaNSense™ technology provides real-time, accurate sensing of voltage, current, and temperature, enhancing performance and robustness.
· The IC features loss-less current sensing, eliminating the need for external current sensing resistors and increasing system efficiency.
· It includes short-circuit and over-temperature protection, along with auto-standby mode for improved efficiency at light loads.
· The IC is packaged in a low-profile, low-inductance SMT QFN format, enabling simple, quick, and reliable solutions.

FEATURES

· Monolithically-integrated gate drive with a wide VCC range (10 to 30 V).
· Programmable turn-on dV/dt and 200 V/ns dV/dt immunity.
· 800 V Transient Voltage Rating and 700 V Continuous Voltage Rating.
· Low 170 mΩ resistance and zero reverse recovery charge.
· Operates up to 2 MHz with integrated loss-less current sensing.
· Includes short-circuit protection, over-temperature protection, and autonomous low-current standby mode.
· Small, low-profile SMT QFN package with a 5 x 6 mm footprint and 0.85 mm profile.
· RoHS, Pb-free, REACH-compliant with up to 40% energy savings compared to silicon solutions.
· 20-year limited product warranty.

APPLICATIONS

· Suitable for AC-DC, DC-DC, and DC-AC topologies.
· Applications include QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, and Class D converters.
· Used in wireless power, solar micro-inverters, LED lighting, TV SMPS, servers, and telecom systems.