DESCRIPTION

· 300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
· Utilises Nexperia’s unique “SchottkyPlus” technology for high efficiency and low spiking performance.
· Optimised for high efficiency applications at high switching frequencies.

FEATURES

· 300 Amp capability with avalanche rating, 100% tested at 190 Amps.
· Ultra low QG, QGD, and QOSS for high system efficiency.
· Superfast switching with soft-recovery; s-factor > 1.
· Low spiking and ringing for low EMI designs.
· Schottky-like performance with < 1 µA leakage at 25 °C.
· Optimised for 4.5 V gate drive with low parasitic inductance and resistance.
· High reliability clip bonded and solder die attach Power SO8 package.
· Wave solderable with exposed leads for optimal visual solder inspection.

APPLICATIONS

· On-board DC-to-DC solutions for server and telecommunications.
· Secondary-side synchronous rectification in telecommunication applications.
· Voltage regulator modules (VRM) and Point-of-Load (POL) modules.
· Power delivery for V-core, ASIC, DDR, GPU, VGA, and system components.
· Brushed and brushless motor control.
· Power OR-ing.