Name: R6520ENZC8
Brand: Rohm Semiconductor
SKU: JM-R6520ENZC8
Availability: InStock

Rohm Semiconductor R6520ENZC8

View All Single FETs, MOSFETs by Rohm Semiconductor

Part Number:
R6520ENZC8
Manufacturer:
Rohm Semiconductor
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
R6520ENZC8_Datesheet
Description:
MOSFET N-CH 650V 20A TO3
In stock 0

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Specifications

Type

Paramete

Type

Paramete

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

68W (Tc)

Mounting Type

Through Hole

Vgs (Max)

±20V

Grade

Qualification

Supplier Device Package

TO-3PF

Gate Charge (Qg) (Max) @ Vgs

61 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

1400 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Operating Temperature

150°C (TJ)

Vgs(th) (Max) @ Id

4V @ 630µA

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Package / Case

TO-3P-3 Full Pack

Drain to Source Voltage (Vdss)

650 V

FET Feature

Rds On (Max) @ Id, Vgs

205mOhm @ 9.5A, 10V

Overview

DESCRIPTION

· R6520ENZ is a 650V, 20A N-channel Power MOSFET in TO-3PF package.

· Features a maximum drain-source on-resistance of 0.205 Ω.

· Capable of handling up to 68W power dissipation.

FEATURES

· Low on-resistance for efficient power handling.

· Fast switching speed suitable for high-frequency applications.

· Designed for easy parallel use in circuits.

· Pb-free plating; compliant with RoHS standards.

APPLICATIONS

· Ideal for switching applications in power supplies and inverters.

· Suitable for use in motor control and power management systems.

· Packaged in tubes with a packing code C17, marked as R6520ENZ.

· Available in quantities of 300 pieces per tube.

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Rohm Semiconductor R6520ENZC8

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