Intel RD28F1604C3TD70SB93

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  • Part Number:

    RD28F1604C3TD70SB93

  • Manufacturer:

    Intel

  • Category:

    Memory

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf RD28F1604C3TD70SB93_Datesheet

  • Description:

    IC FLASH RAM 16MBIT PAR 66SCSP

  • In stock 37
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
66-SCSP (8x12)
Memory Organization
-
Memory Type
Non-Volatile, Volatile
Technology
FLASH, SRAM
Mounting Type
Surface Mount
Write Cycle Time - Word, Page
70ns
Clock Frequency
-
Access Time
70 ns
Memory Format
FLASH, RAM
Package / Case
66-LFBGA, CSPBGA
Memory Size
16Mbit (FLASH), 4Mbit (RAM)
Qualification
-
Grade
-
Memory Interface
Parallel
Operating Temperature
-25°C ~ 85°C (TC)
Voltage - Supply
2.7V ~ 3.3V
Overview

DESCRIPTION

· Intel® Advanced+ Boot Block Flash Memory (C3) SCSP Family is a compact, low-power memory solution integrating flash memory and SRAM in one package.

FEATURES

· Combines Flash Memory and SRAM to reduce board space and simplify PCB design.
· SCSP technology offers the smallest memory subsystem footprint with dimensions of 8x10 mm for 16 Mbit Flash + 2/4 Mbit SRAM and 8x12 mm for 32 Mbit Flash + 4/8 Mbit SRAM.
· Features a height of 1.20 mm for 16/32 Mbit Flash + 2/4/8 Mbit SRAM and 1.40 mm for 32 Mbit Flash + 4 Mbit SRAM.
· Supports 0.25 µm, 0.18 µm, and 0.13 µm technologies.
· Advanced SRAM technology with 70 ns access time and low power operation.
· Intel® Flash Data Integrator (FDI) software enables real-time data storage and code execution.
· Advanced+ Boot Block Flash Memory with 70 ns access time, individual block locking, and a 128-bit protection register.
· Supports 12 V production programming and fast program and erase suspend.
· Operates in extended temperature ranges from -25°C to +85°C.
· Blocking architecture with 4-Kword parameter blocks and 64-Kbyte main blocks, supporting 100,000 erase cycles per block.
· Low power operation with 9 mA asynchronous read current and 7 µA standby current.
· Utilizes 0.25 µm ETOX™ VI, 0.18 µm ETOX™ VII, and 0.13 µm ETOX™ VIII Flash Technologies.

APPLICATIONS

· Ideal for low-power applications requiring compact, high-speed memory solutions.
· Suitable for systems needing integrated code and data storage with enhanced security features.

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