DESCRIPTION

· The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology.
· These devices offer fast page access time of 15 ns and random access time of 90 ns.
· They feature a Write Buffer allowing up to 256 words/512 bytes to be programmed in one operation.
· Ideal for embedded applications requiring higher density, better performance, and lower power consumption.

FEATURES

· CMOS 3.0 V core with versatile I/O.
· 65 nm MIRRORBIT™ Eclipse technology.
· Single supply (VCC) for read/program/erase (2.7 V to 3.6 V).
· Wide I/O voltage range (VIO): 1.65 V to VCC.
· ×16 data bus.
· Asynchronous 32-byte page read.
· 512-byte programming buffer.
· Automatic error checking and correction (ECC).
· Sector erase with uniform 128-kbyte sectors.
· Suspend and resume commands for program and erase operations.
· Advanced sector protection (ASP).
· Separate 1024-byte one time program (OTP) array with two lockable regions.
· Common flash interface (CFI) parameter table.
· Temperature range: Industrial (–40°C to +85°C), Industrial plus (–40°C to +105°C), Automotive, AEC-Q100 grade 3 (–40°C to +85°C), Automotive, AEC-Q100 grade 2 (–40°C to +105°C).
· 100,000 program/erase cycles.
· 20 years data retention.

APPLICATIONS

· Embedded systems requiring high-density flash memory.
· Applications needing fast programming and erase operations.
· Systems with low power consumption requirements.
· Automotive and industrial applications with extended temperature ranges.