SMC Diode Solutions S2M0080120K

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  • Part Number:

    S2M0080120K

  • Manufacturer:

    SMC Diode Solutions

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf S2M0080120K_Datesheet

  • Description:

    MOSFET SILICON CARBIDE SIC 1200V

  • In stock 260
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Supplier Device Package
TO-247-4
Grade
-
Input Capacitance (Ciss) (Max) @ Vds
1324 pF @ 1000 V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Power Dissipation (Max)
231W (Tc)
Vgs (Max)
+25V, -10V
FET Feature
-
FET Type
N-Channel
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
1200 V
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-4
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 20 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Technology
SiCFET (Silicon Carbide)
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