SMC Diode Solutions S2M0120120D

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  • Part Number:

    S2M0120120D

  • Manufacturer:

    SMC Diode Solutions

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf S2M0120120D_Datesheet

  • Description:

    MOSFET SILICON CARBIDE SIC 1200V

  • In stock 290
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Specifications
Type
Paramete
Type
Paramete
Power Dissipation (Max)
156W (Tc)
Vgs(th) (Max) @ Id
4V @ 3.3mA
Rds On (Max) @ Id, Vgs
150mOhm @ 13.3A, 20V
Vgs (Max)
+20V, -5V
Supplier Device Package
TO-247AD
FET Type
N-Channel
Grade
-
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
20V
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Operating Temperature
-55°C ~ 175°C (TJ)
Technology
SiC (Silicon Carbide Junction Transistor)
Input Capacitance (Ciss) (Max) @ Vds
652 pF @ 1000 V
Package / Case
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
29.6 nC @ 20 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Qualification
-
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