STMicroelectronics SCTWA35N65G2VAG

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  • Part Number:

    SCTWA35N65G2VAG

  • Manufacturer:

    STMicroelectronics

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

  • Description:

    SICFET N-CH 650V 45A TO247

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Rds On (Max) @ Id, Vgs
72mOhm @ 20A, 20V
Power Dissipation (Max)
208W (Tc)
Vgs(th) (Max) @ Id
3.2V @ 1mA
Drain to Source Voltage (Vdss)
650 V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
Technology
SiCFET (Silicon Carbide)
Grade
-
Supplier Device Package
TO-247 Long Leads
FET Feature
-
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Package / Case
TO-247-3
Vgs (Max)
+20V, -5V
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