DESCRIPTION

· The STAC150V2-350E is a high voltage N-channel MOS field-effect RF power transistor designed for 150V Industrial RF power class E generators.

· It is suitable for applications such as PECVD plasma sputtering, flat panel, and solar cells manufacturing equipment.

· Utilizes STAC® air cavity package technology, offering 25% lower thermal resistance compared to equivalent ceramic packages.

FEATURES

· Operating frequencies up to 40.68 MHz.

· Excellent thermal stability.

· POUT = 350 W with 17 dB gain @ 40.68 MHz/150 V.

· Designed for class E operation.

· V(BR)DSS > 700 V.

· Compliant with the 2002/95/EC1 European directive.

APPLICATIONS

· Industrial RF power class E generators.

· PECVD plasma sputtering.

· Flat panel manufacturing.

· Solar cells manufacturing equipment.