STMicroelectronics STS4C3F60L

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  • Part Number:

    STS4C3F60L

  • Manufacturer:

    STMicroelectronics

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf STS4C3F60L_Datesheet

  • Description:

    MOSFET N/P-CH 60V 4A/3A 8SOIC

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Drain to Source Voltage (Vdss)
60V
Configuration
N and P-Channel
Package / Case
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs
20.4nC @ 4.5V
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
1V @ 250µA
Mounting Type
Surface Mount
Power - Max
2W
Current - Continuous Drain (Id) @ 25°C
4A, 3A
Grade
-
Input Capacitance (Ciss) (Max) @ Vds
1030pF @ 25V
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
55mOhm @ 2A, 10V
Supplier Device Package
8-SOIC
FET Feature
Logic Level Gate
Overview

DESCRIPTION

· Latest development of STMicroelectronics' "Single Feature Size™" strip-based process.
· High packing density for low on-resistance.
· Rugged avalanche characteristics.
· Remarkable manufacturing reproducibility.



FEATURES

· Standard outline for easy automated surface mount assembly.
· Low threshold drive.



APPLICATIONS

· Switching applications.



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