Mini-Circuits TAV-551+

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  • Part Number:

    TAV-551+

  • Manufacturer:

    Mini-Circuits

  • Category:

    RF FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf TAV-551+_Datesheet

  • Description:

    RF MOSFET E-PHEMT 3V FG873

  • In stock 0
" Not available to buy online? Want the lower wholesale price? Please send RFQ, we will respond immediately
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Specifications
Type
Paramete
Type
Paramete
Power - Output
20.1dB
Gain
16.3dB
Noise Figure
1.7dB
Package / Case
4-SMD, No Lead
Current Rating (Amps)
-
Current - Test
15 mA
Configuration
-
Technology
E-pHEMT
Mounting Type
Surface Mount
Supplier Device Package
FG873
Frequency
6GHz
Voltage - Test
3 V
Qualification
-
Grade
-
Voltage - Rated
5 V
Overview

DESCRIPTION



· The TAV-551+ is an ultra-low noise, high IP3 transistor device utilizing E-PHEMT technology.

· It operates with a single positive supply voltage and is ideal for demanding base station applications.

· The device is available as a complete module with 50Ω input/output, noise matched, and fully specified.



FEATURES



· Low Noise Figure: 0.5 dB.

· Gain: 16 dB at 2 GHz.

· High Output IP3: +25 dBm.

· Low Current: 15mA.

· Wide bandwidth: 0.45-6 GHz.

· External biasing and matching required.

· RoHS Compliant.



APPLICATIONS



· Cellular.

· ISM.

· GSM.

· WCDMA.

· WiMax.

· WLAN.

· UNII and HIPERLAN.

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