Kioxia America, Inc. TH58NVG4S0HTAK0

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  • Part Number:

    TH58NVG4S0HTAK0

  • Manufacturer:

    Kioxia America, Inc.

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf TH58NVG4S0HTAK0_Datesheet

  • Description:

    IC FLSH 16GBIT PARALLEL 48TSOP I

  • In stock 95
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Specifications
Type
Paramete
Type
Paramete
Package / Case
48-TFSOP (0.724", 18.40mm Width)
Voltage - Supply
2.7V ~ 3.6V
Mounting Type
Surface Mount
Memory Organization
2G x 8
Memory Interface
Parallel
Supplier Device Package
48-TSOP I
Qualification
-
Technology
FLASH - NAND (SLC)
Grade
-
Write Cycle Time - Word, Page
25ns
Access Time
25 ns
Memory Format
FLASH
Memory Size
16Gbit
Clock Frequency
-
Memory Type
Non-Volatile
Operating Temperature
-40°C ~ 85°C (TA)
Overview

DESCRIPTION

· The TH58NVG4S0HTA K0 is a 3.3V 16Gbit NAND E2PROM organized as (4096 + 256) bytes × 64 pages × 8192 blocks.
· It features two 4352-byte static registers for data transfer between the register and memory cell array.
· Erase operations are performed in single block units of (256Kbytes + 16Kbytes).
· It is a serial-type memory device using I/O pins for address, data, and command inputs.

FEATURES

· Memory cell array: 4352 × 128K × 8 × 4.
· Page size: 4352 bytes; Block size: (256K + 16K) bytes.
· Modes include Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
· Power supply: VCC = 2.7V to 3.6V.
· Access time: Cell array to register 25 μs max; Read Cycle Time 25 ns min.
· Program/Erase time: Auto Page Program 300 μs/page typ.; Auto Block Erase 2.5 ms/block typ.
· Operating current: Read 30 mA max; Program 30 mA max; Erase 30 mA max; Standby 200 μA max.
· Package: TSOP I 48-P-1220-0.50 (Weight: 0.56 g typ.).
· 8-bit ECC required for each 512Byte.

APPLICATIONS

· Suitable for solid-state file storage, voice recording, and image file memory for still cameras.
· Ideal for systems requiring high-density non-volatile memory data storage.

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