DESCRIPTION

· Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A

FEATURES

· High speed trench gate field-stop IGBT with positive temperature coefficient

· Maximum junction temperature (TJ) of 175 °C

· FRED Pt® anti-parallel diodes with ultrasoft reverse recovery

· Fully isolated package with very low internal inductance (≤ 5 nH typical)

· Industry standard outline, UL approved file E78996

APPLICATIONS

· Designed for increased operating efficiency in power conversion applications

· Suitable for UPS, SMPS, welding, and induction heating

· Easy to assemble and safe paralleling

· Direct mounting to heatsink, plug-in compatible with other SOT-227 packages

· Lower conduction and switching losses, low EMI, requires less snubbing