DESCRIPTION

· Small area planar silicon photodiode in a recessed ceramic package.
· Chip coated with a protective layer of clear epoxy.
· High shunt resistance and good blue response.

FEATURES

· Active area: 0.0025 in² (1.60 mm²).
· Storage and operating temperature: -20°C to 75°C.
· Short circuit current: 8-13 µA at 100 fc, 2850 K.
· Open circuit voltage: 490 mV at 100 fc, 2850 K.
· Dark current: 20 pA at VR = 2.0 V.
· Shunt resistance: 0.25-7.0 GΩ at V = 10 mV.
· Junction capacitance: 0.31 nF at V = 0.
· Sensitivity: 0.09 A/W at 365 nm.
· Spectral range: 320-1100 nm.
· Peak spectral response: 920 nm.
· Breakdown voltage: 2-40 V.
· Angular response: ±50 degrees.
· Noise equivalent power: 3.0 x 10⁻¹⁴ (Typ.).
· Specific detectivity: 4.2 x 10¹² (Typ.).

APPLICATIONS

· Suitable for applications requiring high shunt resistance and good blue response.
· Ideal for use in environments with temperatures ranging from -20°C to 75°C.
· Used in spectral applications ranging from 320 nm to 1100 nm.