W25N01GVZEIG Complete Supplementary Information

1. Basic Identification

• Full Part Number: W25N01GVZEIG
• Manufacturer: Winbond Electronics
• Device Type: 1G-bit (128M‑Byte) SLC Serial NAND Flash Memory
• Product Series: W25N01GV
• Status: Active, Mass Production
• RoHS/Compliance: Lead‑free, Halogen‑free, Green, RoHS compliant
• Top Marking: 25N01GVZEIG
• Voltage: Single 2.7V – 3.6V supply
• Temperature Grade: Industrial (I) −40°C to +85°C
• Interface: Standard SPI, Dual SPI, Quad SPI (QSPI)

2. Package & Mechanical Specifications

• Package Type: 8‑pad WSON (Package Code: ZE)
• Dimensions: 8.0 mm × 6.0 mm × 0.75 mm (nominal)
• Pin Pitch: 1.27 mm BSC
• Mounting: Surface‑mount (SMT)
• Exposed Pad: Floating (no internal electrical connection)
• Moisture Sensitivity Level: Standard for WSON package

3. Memory Architecture

• Total Density: 1G‑bit (134,217,728 bytes)
• Page Size: 2048 bytes main + 64 bytes spare = 2112 bytes
• Block Size: 64 pages = 128 KB
• Number of Blocks: 1024 blocks
• Valid Blocks: Min 1004 guaranteed at shipment
• Total Pages: 65,536 programmable pages

4. Key Performance Parameters

• Clock Frequency: Up to 104 MHz (STR)
• Equivalent Speed: Dual I/O 208 MHz; Quad I/O 416 MHz
• Continuous Data Rate: Up to 50 MB/s
• Endurance: 100,000 program/erase cycles
• Data Retention: 10 years
• Page Program Time: Typ 250 µs, Max 700 µs
• Block Erase Time: Typ 2 ms, Max 10 ms
• Page Read Time: Max 60 µs (ECC enabled)
• Partial Page Programs: Up to 4 times per page

5. Power Characteristics

• Active Current (Read/Program/Erase): Max 35 mA, Typ 25 mA
• Standby Current: Typ 10 µA; Max 50 µA @ 85°C
• Supply Voltage (VCC): 2.7 V to 3.6 V
• Logic Levels:

6. Pin Configuration (8‑Pad WSON ZE, Top View)

表格

7. Core Features

• On‑chip 1‑bit ECC (automatic error correction, default enabled)
• Dual/Quad I/O for high‑speed read
• Continuous Read Mode & Buffer Read Mode
• Built‑in bad block management (up to 20 block replacements)
• Hardware / Software write protection
• HOLD function pauses SPI operations
• OTP area (10 × 2112‑byte pages, permanent lockable)
• Unique ID & Parameter Page (factory‑programmed, read‑only)
• Software reset via instruction (FFh)
• Multiple status registers for protection and status monitoring

8. Protection & Security

• Block protection via BP[3:0] + TB bits
• Status register protection (SRP[1:0])
• OTP lock bit for permanent OTP protection
• Power‑up write protection until VCC stable
• Write Enable Latch (WEL) required before program/erase

9. Key Supported Instructions

• Read JEDEC ID (9Fh), Read Status (05h/0Fh), Write Status (01h/1Fh)
• Write Enable (06h), Write Disable (04h)
• Block Erase (D8h), Page Data Read (13h), Read Data (03h), Fast Read (0Bh)
• Dual/Quad I/O Fast Read (3Bh, 6Bh, BBh, EBh)
• Program Load (02h, 84h, 32h, 34h), Program Execute (10h)
• Bad Block Management (A1h), Read BBM LUT (A5h)
• Device Reset (FFh)

10. Reliability & Handling

• ESD Rating: ±2000 V (HBM)
• Junction Temperature: −40°C to 150°C
• Storage Temperature: −65°C to +150°C
• Built‑in bad block marking and handling
• ECC status, P‑FAIL, E‑FAIL, BUSY status monitoring

11. Typical Applications

• Firmware storage for embedded systems
• Code shadowing to RAM
• Industrial control, IoT, consumer electronics
• Portable devices with limited PCB space
• XIP (eXecute In Place) via Quad SPI