Name: XP3P010YT
Brand: YAGEO XSEMI
SKU: JM-XP3P010YT
Availability: InStock

YAGEO XSEMI XP3P010YT

View All Single FETs, MOSFETs by YAGEO XSEMI

Part Number:
XP3P010YT
Manufacturer:
YAGEO XSEMI
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
XP3P010YT_Datesheet
Description:
MOSFET P-CH 30V 14.6A PMPAK
In stock 1,000

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Specifications

Type

Paramete

Type

Paramete

Power Dissipation (Max)

3.12W (Ta)

Qualification

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

8-PowerDFN

Rds On (Max) @ Id, Vgs

10mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Vgs (Max)

±20V

Current - Continuous Drain (Id) @ 25°C

14.6A (Ta)

Mounting Type

Surface Mount

Grade

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Supplier Device Package

PMPAK® 3 x 3

Technology

MOSFET (Metal Oxide)

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

54.4 nC @ 4.5 V

FET Feature

Input Capacitance (Ciss) (Max) @ Vds

6080 pF @ 15 V

Overview

DESCRIPTION

· The XP3P010YT is a P-Channel Enhancement Mode Power MOSFET designed with innovative silicon process technology to achieve low on-resistance and fast switching performance.

· It is optimized for a wide range of power applications, featuring the PMPAK® 3x3 package, which is specifically tailored for DC-DC converters and includes a low 1.0mm profile with a backside heat sink.

FEATURES

· Low Gate Charge and Fast Switching Characteristics for efficient operation.

· Drain-Source Voltage (VDS) of -30V and Drain Current (ID) of -14.6A at 25°C.

· On-Resistance (RDS(ON)) as low as 10mΩ, enhancing power efficiency.

· RoHS Compliant and Halogen-Free, ensuring environmental safety.

APPLICATIONS

· Ideal for use in DC-DC converters due to its efficient power handling and compact PMPAK® 3x3 package.

· Suitable for a broad range of power management applications where low on-resistance and fast switching are critical.

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