YAGEO XSEMI XP3P050AM

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  • Part Number:

    XP3P050AM

  • Manufacturer:

    YAGEO XSEMI

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf XP3P050AM_Datesheet

  • Description:

    MOSFET P-CH 30V 5.8A 8SO

  • In stock 998
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Specifications
Type
Paramete
Type
Paramete
Mounting Type
Surface Mount
Qualification
-
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
960 pF @ 15 V
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
2.5W (Ta)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
5.8A (Ta)
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
8-SOIC
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
10.7 nC @ 4.5 V
Rds On (Max) @ Id, Vgs
50mOhm @ 5A, 10V
Grade
-
Vgs(th) (Max) @ Id
3V @ 250µA
Overview

DESCRIPTION



· The XP3P050A series P-Channel Enhancement Mode Power MOSFET is designed with innovative silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

· It is highly efficient and suitable for a wide range of power applications.

· The SO-8 package is preferred for commercial-industrial surface mount applications, particularly in low voltage scenarios such as DC/DC converters.



FEATURES



· Low Gate Charge with a BVDSS of -30V.

· Fast switching characteristics with an RDS(ON) of 50mΩ.

· Simple drive requirements with an ID of 3-5.8A.

· RoHS compliant and halogen-free.



APPLICATIONS



· Suitable for use in DC/DC converters and other low voltage applications.

· Ideal for commercial-industrial surface mount applications.

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