Toshiba Semiconductor and Storage 1SV281(TPH3,F)

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1SV281(TPH3,F)

View All Variable Capacitance (Varicaps, Varactors) by Toshiba Semiconductor and Storage

View All Variable Capacitance (Varicaps, Varactors) by Toshiba Semiconductor and Storage

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Specifications
Type
Paramete
Type
Paramete
Operating Temperature
125°C (TJ)
Package / Case
SC-79, SOD-523
Capacitance @ Vr, F
8.7pF @ 4V, 1MHz
Diode Type
Single
Q @ Vr, F
-
Capacitance Ratio Condition
C1/C4
Qualification
-
Supplier Device Package
ESC
Voltage - Peak Reverse (Max)
10 V
Capacitance Ratio
2
Grade
-
Mounting Type
Surface Mount
Overview

DESCRIPTION

· 1SV281 is a Silicon Epitaxial Planar Type Variable Capacitance Diode.

· Designed for VCO in V/UHF Band Radio applications.



FEATURES

· High capacitance ratio: C1V/C4V = 2.0 (typ.).

· Low series resistance: rs = 0.28 Ω (typ.).

· Suitable for compact tuner designs.



APPLICATIONS

· VCO circuits in V/UHF Band Radio.

· Small size tuners.



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