Toshiba Semiconductor and Storage 1SV305,L3F

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1SV305,L3F

View All Variable Capacitance (Varicaps, Varactors) by Toshiba Semiconductor and Storage

View All Variable Capacitance (Varicaps, Varactors) by Toshiba Semiconductor and Storage

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Specifications
Type
Paramete
Type
Paramete
Capacitance @ Vr, F
6.6pF @ 4V, 1MHz
Capacitance Ratio
3
Capacitance Ratio Condition
C1/C4
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Voltage - Peak Reverse (Max)
10 V
Diode Type
Single
Grade
-
Q @ Vr, F
-
Supplier Device Package
ESC
Package / Case
SC-79, SOD-523
Qualification
-
Overview

DESCRIPTION

· Silicon epitaxial planar type variable capacitance diode designed for VHF band radio applications.



FEATURES

· Compact package design for space-saving integration.

· High capacitance ratio (C1V/C4V = 3.0 typical) for enhanced performance.

· Low series resistance (0.27 Ω typical) for improved efficiency.



APPLICATIONS

· Voltage-controlled oscillators (VCO) in VHF band radio systems.

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