DESCRIPTION

· The 2N5952 is an N-Channel RF Amplifier designed primarily for electronic switching applications.

· It is sourced from process 50 and features low on-resistance analog switching capabilities.

FEATURES

· Maximum Drain-Gate Voltage (VDG): 30V

· Maximum Gate-Source Voltage (VGS): -30V

· Forward Gate Current (IGF): 10mA

· Operating and Storage Junction Temperature Range: -55°C to +150°C

· Gate-Source Breakdown Voltage (V(BR)GSS): 30V

· Zero-Gate Voltage Drain Current (IDSS): 4.0mA to 8.0mA

· Forward Transfer Conductance (gfs): 2000µmhos to 6500µmhos

· Input Capacitance (Ciss): 6.0pF

· Reverse Transfer Capacitance (Crss): 2.0pF

· Noise Figure (NF): 2.0dB

· Total Device Dissipation (PD): 350mW

· Thermal Resistance, Junction to Case (RθJC): 125°C/W

· Thermal Resistance, Junction to Ambient (RθJA): 357°C/W

APPLICATIONS

· Electronic switching applications

· Low on-resistance analog switching