Features:

• Glass-encapsulated NTC thermistor with high stability and heat resistance.
• Electrical insulation provided by the coating of glass body and leads.
• Designed for temperature measurement up to 260°C.
• Short response time.
• Small dimensions.
• Leads: dumet wires (copper-clad FeNi).

Applications:

• Temperature measurement.

Quick Reference Data:

• Collector-Emitter Voltage (VCEO) with open base: 50V
• Output Current (IO): 100 mA
• Bias Resistor 1 (R1): 7 kΩ to 13 kΩ
• Bias Resistor Ratio (R2/R1): 0.8 to 1.2

Pinning Information:

• Pin 1: GND1 (Emitter of TR1)
• Pin 2: I1 (Input Base of TR1)
• Pin 3: O2 (Output Collector of TR2)
• Pin 4: GND2 (Emitter of TR2)
• Pin 5: I2 (Input Base of TR2)
• Pin 6: O1 (Output Collector of TR1)

Limiting Values:

• Collector-Base Voltage (VCBO) with open emitter: 50V
• Collector-Emitter Voltage (VCEO) with open base: 50V
• Emitter-Base Voltage (VEBO) with open collector: 10V
• Input Voltage (VI) for TR1: -10V to 40V, for TR2: -40V to 10V
• Output Current (IO): 100 mA
• Total Power Dissipation (Ptot) at ambient temperature ≤ 25°C: 200 mW per transistor, 300 mW per device

Thermal Characteristics:

• Thermal Resistance from Junction to Ambient (Rth(j-a)) in free air: 625 K/W per transistor, 417 K/W per device

Characteristics:

• Collector-Base Breakdown Voltage (V(BR)CBO): 50V
• Collector-Emitter Breakdown Voltage (V(BR)CEO): 50V
• Collector-Base Cut-Off Current (ICBO): 100 nA
• Collector-Emitter Cut-Off Current (ICEO): 100 nA at 30V, 5 µA at 150°C
• Emitter-Base Cut-Off Current (IEBO): 400 µA
• DC Current Gain (hFE): 30
• Collector-Emitter Saturation Voltage (VCEsat): 100 mV
• Off-State Input Voltage (VI(off)): 0.8V to 1.1V
• On-State Input Voltage (VI(on)): 1.8V to 2.5V
• Bias Resistor 1 (R1): 7 kΩ to 13 kΩ
• Bias Resistor Ratio (R2/R1): 0.8 to 1.2
• Collector Capacitance (Cc): 2.5 pF for NPN, 3 pF for PNP
• Transition Frequency (fT): 230 MHz for NPN, 180 MHz for PNP