DESCRIPTION

· N-Channel RF Amplifier designed for high-frequency applications.
· Suitable for RF amplifier and mixer operations up to 450 MHz.
· Optimized for analog switching with low capacitance requirements.
· Manufactured using Process 50 technology.

FEATURES

· Maximum junction temperature of 150°C.
· Total device dissipation of 350 mW, derating at 2.8 mW/°C above 25°C.
· Thermal resistance from junction to case: 125°C/W.
· Thermal resistance from junction to ambient: 357°C/W.
· Drain-Gate Voltage (VDG): 30 V.
· Gate-Source Voltage (VGS): -30 V.
· Drain Current (ID): 50 mA.
· Forward Gate Current (IGF): 10 mA.
· Storage temperature range: -55°C to +150°C.

APPLICATIONS

· RF amplification and mixing in communication systems.
· Analog switching in low capacitance environments.
· High-frequency signal processing up to 450 MHz.