DESCRIPTION

· 160 W LDMOS power transistor for base station applications

· Frequency range: 1805 MHz to 2000 MHz

· Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier; 5 MHz carrier spacing

FEATURES

· Excellent ruggedness and high efficiency

· Low thermal resistance for thermal stability

· Enhanced video bandwidth performance (70 MHz typical)

· Broadband operation (1805 MHz to 2000 MHz)

· Lower output capacitance for Doherty applications

· Low memory effects for pre-distortability

· Internally matched and integrated ESD protection

· RoHS compliant

APPLICATIONS

· RF power amplifiers for base stations

· Multi-carrier applications in the 1805 MHz to 2000 MHz frequency range