Ampleon USA Inc. BLC10G22XS-400AVTY


- Part Number:
BLC10G22XS-400AVTY
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant
- Datasheet:
BLC10G22XS-400AVTY_Datesheet
- Description:
RF MOSFET LDMOS 28V SOT1258-4
- In stock 46
BLC10G22XS-400AVT Model Information
General Description
The BLC10G22XS-400AVT is a 400W LDMOS packaged asymmetric Doherty power transistor designed for base station applications within the frequency range of 2110MHz to 2200MHz.
Features
- Excellent ruggedness
- High efficiency
- Low thermal resistance for excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Low memory effects for excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- RoHS compliant (for details, see the product details on the Ampleon website)
Applications
- RF power amplifiers for base stations and multi-carrier applications in the 2110MHz to 2200MHz frequency range
Pinning Information
TableCopy
Pin | Description | Simplified Outline | Graphic Symbol |
---|---|---|---|
1 | drain2 (peak) | 7 2 1 6 5 3 4 | 2,7 H 3 5 4 1,6 aaa-014884 |
2 | drain1 (main) | ||
3 | gate1 (main) | ||
4 | gate2 (peak) | ||
5 | E source | ||
6 | video decoupling (peak) | ||
7 | video decoupling (main) |
Ordering Information
- Type Number: BLC10G22XS-400AVT
- Package Name: aircavity plastic earless flanged package
- Description: 6 leads
- Version: SOT1258-4
Limiting Values
TableCopy
Symbol | Parameter | Conditions | Min | Max | Unit |
---|---|---|---|---|---|
VDss | drain-source voltage | = | 65 | V | |
VGS(amp)main | main amplifier gate-source voltage | -6 | +9 | V | |
VGS(amp)peak | peak amplifier gate-source voltage | -6 | +9 | V | |
storage temperature | -65 | +150 | ℃ | ||
Tj | junction temperature | 225 | ℃ | ||
Tcase | case temperature (operating) | [1] | -40 | +125 | ℃ [1] Continuous use at maximum temperature will affect reliability. For details, refer to the online MTF calculator. |
Thermal Characteristics
TableCopy
Symbol | Parameter | Conditions | Typ | Unit |
---|---|---|---|---|
Rth(j-c) | thermal resistance from junction to case | VDss=28V; IDq=800 mA (main); VGS(amp)peak=1.0V; Tcase=80℃ | k/W | |
PL=56W | 0.29 | k/W | ||
PL=74 W | 0.27 | k/W |
DC Characteristics (Tj = 25℃ unless otherwise specified)
TableCopy
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Main Device | ||||||
V(BR)DSS | drain-source breakdown voltage | VGS = 0 V; ID = 1.44 mA | 65 | V | ||
VGS(th) | gate-source threshold voltage | VDss = 10 V; ID = 144 mA | 1.5 | 2.0 | 2.5 | V |
VGSq | gate-source quiescent voltage | VDss = 28 V; ID = 800 mA | 2.2 | V | ||
IDSS | drain leakage current | VGS = 0 V; VDss = 32 V | 2.8 | µA | ||
IDSX | drain cut-off current | VGS = VGS(th) + 3.75 V | 26.5 | A | ||
IGSS | gate leakage current | VGS = 9 V; VDss = 0 V | 280 | nA | ||
gfs | forward transconductance | VDss = 10 V; ID = 7.2 A | 15.0 | S | ||
RDS(on) | drain-source on-state resistance | VGS = VGS(th) + 3.75 V; ID = 5.04 A | 93 | 128 | mΩ | |
Peak Device | ||||||
V(BR)DSS | drain-source breakdown voltage | VGS = 0 V; ID = 2.98 mA | 65 | V | ||
VGS(th) | gate-source threshold voltage | VDss = 10 V; ID = 298 mA | 1.5 | 2.0 | 2.5 | V |
VGSq | gate-source quiescent voltage | VDss = 28 V; ID = 1600 mA | 2.2 | V | ||
IDSS | drain leakage current | VGS = 0 V; VDss = 32 V | 2.8 | µA | ||
IDSX | drain cut-off current | VGS = VGS(th) + 3.75 V | 47 | A | ||
IGSS | gate leakage current | VGS = 11 V; VDss = 0 V | 280 | nA | ||
gfs | forward transconductance | VDss = 10 V; ID = 14.9 A | 28.5 | S | ||
RDS(on) | drain-source on-state resistance | VGS = VGS(th) + 3.75 V; ID = 10.43 A | 50 | 74 | mΩ |
RF Characteristics
Test Signal: 1-Carrier W-CDMA; PAR = 9.6dB at 0.01% probability on the CCDF; 3GPP test model 1; 1 to 64DPCH; f1=2112.5MHz; f2=2167.5MHz; RF performance at VDss =28V; IDq =800mA (main); VGS(amp)peak =1.0V; Tcase =25℃; unless otherwise specified; in an asymmetrical Doherty production test circuit at frequencies from 2110MHz to 2200MHz.
TableCopy
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Gp | power gain | PL(AV) = 56 W | 15.3 | 16.3 | dB | |
RLin | input return loss | PL(AV)= 56 W | - | -14 | -9 | dB |
ηD | drain efficiency | PL(Av) = 56 W | 42 | 46 | % | |
ACPR | adjacent channel power ratio | PL(AV) = 56 W | - | -29 | -24 | dBc |
Test Signal: 1-Carrier W-CDMA; PAR = 9.6dB at 0.01% probability on the CCDF; 3GPP test model 1; 1 to 64DPCH; f1=2112.5MHz; f2=2167.5MHz; RF performance at VDss =28V; IDq =800mA (main); VGS(amp)peak =1.0V; Tcase =25℃; unless otherwise specified; in an asymmetrical Doherty production test circuit at a frequency of 2200MHz.
TableCopy
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
PARo | output peak-to-average ratio | PL(AV) = 56 W | 6.3 | 6.9 | dB | |
PL(M) | peak output power | PL(AV) = 56 W | 380 | 440 | W |
Test Information
Ruggedness in Doherty Operation
The BLC10G22XS-400AVT can withstand a load mismatch corresponding to VSWR =10:1 through all phases under the following conditions: VDss=32V; IDq =800mA; VGS(amp)peak =1.0V;
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Ampleon USA Inc.

Ampleon USA Inc.