Ampleon USA Inc. BLC10G22XS-400AVTY

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Specifications
Type
Paramete
Type
Paramete
Noise Figure
-
Grade
-
Supplier Device Package
SOT1258-4
Configuration
-
Package / Case
SOT-1258-4
Current Rating (Amps)
2.8µA
Mounting Type
Surface Mount
Power - Output
400W
Current - Test
800 mA
Voltage - Rated
65 V
Gain
17dB
Technology
LDMOS
Voltage - Test
28 V
Qualification
-
Frequency
2.11GHz ~ 2.2GHz
Overview

BLC10G22XS-400AVT Model Information

General Description

The BLC10G22XS-400AVT is a 400W LDMOS packaged asymmetric Doherty power transistor designed for base station applications within the frequency range of 2110MHz to 2200MHz.

Features

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance for excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Low memory effects for excellent digital pre-distortion capability
  • Internally matched for ease of use
  • Integrated ESD protection
  • RoHS compliant (for details, see the product details on the Ampleon website)

Applications

  • RF power amplifiers for base stations and multi-carrier applications in the 2110MHz to 2200MHz frequency range

Pinning Information

TableCopy


PinDescriptionSimplified OutlineGraphic Symbol
1drain2 (peak)7 2 1 6 5 3 42,7 H 3 5 4 1,6 aaa-014884
2drain1 (main)
3gate1 (main)
4gate2 (peak)
5E source
6video decoupling (peak)
7video decoupling (main)

Ordering Information

  • Type Number: BLC10G22XS-400AVT
  • Package Name: aircavity plastic earless flanged package
  • Description: 6 leads
  • Version: SOT1258-4

Limiting Values

TableCopy


SymbolParameterConditionsMinMaxUnit
VDssdrain-source voltage=65V
VGS(amp)mainmain amplifier gate-source voltage-6+9V
VGS(amp)peakpeak amplifier gate-source voltage-6+9V
storage temperature-65+150
Tjjunction temperature225
Tcasecase temperature (operating)[1]-40+125
[1] Continuous use at maximum temperature will affect reliability. For details, refer to the online MTF calculator.

Thermal Characteristics

TableCopy


SymbolParameterConditionsTypUnit
Rth(j-c)thermal resistance from junction to caseVDss=28V; IDq=800 mA (main); VGS(amp)peak=1.0V; Tcase=80℃k/W
PL=56W0.29k/W
PL=74 W0.27k/W

DC Characteristics (Tj = 25℃ unless otherwise specified)

TableCopy


SymbolParameterConditionsMinTypMaxUnit
Main Device
V(BR)DSSdrain-source breakdown voltageVGS = 0 V; ID = 1.44 mA65V
VGS(th)gate-source threshold voltageVDss = 10 V; ID = 144 mA1.52.02.5V
VGSqgate-source quiescent voltageVDss = 28 V; ID = 800 mA2.2V
IDSSdrain leakage currentVGS = 0 V; VDss = 32 V2.8µA
IDSXdrain cut-off currentVGS = VGS(th) + 3.75 V26.5A
IGSSgate leakage currentVGS = 9 V; VDss = 0 V280nA
gfsforward transconductanceVDss = 10 V; ID = 7.2 A15.0S
RDS(on)drain-source on-state resistanceVGS = VGS(th) + 3.75 V; ID = 5.04 A93128
Peak Device
V(BR)DSSdrain-source breakdown voltageVGS = 0 V; ID = 2.98 mA65V
VGS(th)gate-source threshold voltageVDss = 10 V; ID = 298 mA1.52.02.5V
VGSqgate-source quiescent voltageVDss = 28 V; ID = 1600 mA2.2V
IDSSdrain leakage currentVGS = 0 V; VDss = 32 V2.8µA
IDSXdrain cut-off currentVGS = VGS(th) + 3.75 V47A
IGSSgate leakage currentVGS = 11 V; VDss = 0 V280nA
gfsforward transconductanceVDss = 10 V; ID = 14.9 A28.5S
RDS(on)drain-source on-state resistanceVGS = VGS(th) + 3.75 V; ID = 10.43 A5074

RF Characteristics

Test Signal: 1-Carrier W-CDMA; PAR = 9.6dB at 0.01% probability on the CCDF; 3GPP test model 1; 1 to 64DPCH; f1=2112.5MHz; f2=2167.5MHz; RF performance at VDss =28V; IDq =800mA (main); VGS(amp)peak =1.0V; Tcase =25℃; unless otherwise specified; in an asymmetrical Doherty production test circuit at frequencies from 2110MHz to 2200MHz.

TableCopy


SymbolParameterConditionsMinTypMaxUnit
Gppower gainPL(AV) = 56 W15.316.3dB
RLininput return lossPL(AV)= 56 W--14-9dB
ηDdrain efficiencyPL(Av) = 56 W4246%
ACPRadjacent channel power ratioPL(AV) = 56 W--29-24dBc

Test Signal: 1-Carrier W-CDMA; PAR = 9.6dB at 0.01% probability on the CCDF; 3GPP test model 1; 1 to 64DPCH; f1=2112.5MHz; f2=2167.5MHz; RF performance at VDss =28V; IDq =800mA (main); VGS(amp)peak =1.0V; Tcase =25℃; unless otherwise specified; in an asymmetrical Doherty production test circuit at a frequency of 2200MHz.

TableCopy


SymbolParameterConditionsMinTypMaxUnit
PARooutput peak-to-average ratioPL(AV) = 56 W6.36.9dB
PL(M)peak output powerPL(AV) = 56 W380440W

Test Information

Ruggedness in Doherty Operation

The BLC10G22XS-400AVT can withstand a load mismatch corresponding to VSWR =10:1 through all phases under the following conditions: VDss=32V; IDq =800mA; VGS(amp)peak =1.0V;


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