Ampleon USA Inc. BLC10G22XS-400AVTY

View All Single, Pre-Biased Bipolar Transistors by Ampleon USA Inc.

Part Number:
BLC10G22XS-400AVTY
Manufacturer:
Ampleon USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
BLC10G22XS-400AVTY_Datesheet
Description:
RF MOSFET LDMOS 28V SOT1258-4
In stock 46

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Specifications

Type

Paramete

Type

Paramete

Qualification

Noise Figure

Mounting Type

Surface Mount

Package / Case

SOT-1258-4

Grade

Supplier Device Package

SOT1258-4

Gain

17dB

Technology

LDMOS

Configuration

Current - Test

800 mA

Voltage - Test

28 V

Voltage - Rated

65 V

Frequency

2.11GHz ~ 2.2GHz

Power - Output

400W

Current Rating (Amps)

2.8µA

Overview

BLC10G22XS-400AVT Model Information

Name: BLC10G22XS-400AVTY
Brand: Ampleon USA Inc.
SKU: JM-BLC10G22XS-400AVTY
Availability: InStock

General Description

The BLC10G22XS-400AVT is a 400W LDMOS packaged asymmetric Doherty power transistor designed for base station applications within the frequency range of 2110MHz to 2200MHz.

Features

Excellent ruggedness
High efficiency
Low thermal resistance for excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Low memory effects for excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
RoHS compliant (for details, see the product details on the Ampleon website)

Applications

RF power amplifiers for base stations and multi-carrier applications in the 2110MHz to 2200MHz frequency range

Pinning Information

TableCopy

Pin	Description	Simplified Outline	Graphic Symbol
1	drain2 (peak)	7 2 1 6 5 3 4	2,7 H 3 5 4 1,6 aaa-014884
2	drain1 (main)
3	gate1 (main)
4	gate2 (peak)
5	E source
6	video decoupling (peak)
7	video decoupling (main)

Ordering Information

Type Number: BLC10G22XS-400AVT
Package Name: aircavity plastic earless flanged package
Description: 6 leads
Version: SOT1258-4

Limiting Values

TableCopy

Symbol	Parameter	Conditions	Min	Max	Unit
VDss	drain-source voltage		=	65	V
VGS(amp)main	main amplifier gate-source voltage		-6	+9	V
VGS(amp)peak	peak amplifier gate-source voltage		-6	+9	V
	storage temperature		-65	+150	℃
Tj	junction temperature			225	℃
Tcase	case temperature (operating)	[1]	-40	+125	℃ [1] Continuous use at maximum temperature will affect reliability. For details, refer to the online MTF calculator.

Thermal Characteristics

TableCopy

Symbol	Parameter	Conditions	Typ	Unit
Rth(j-c)	thermal resistance from junction to case	VDss=28V; IDq=800 mA (main); VGS(amp)peak=1.0V; Tcase=80℃		k/W
		PL=56W	0.29	k/W
		PL=74 W	0.27	k/W

DC Characteristics (Tj = 25℃ unless otherwise specified)

TableCopy

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Main Device
V(BR)DSS	drain-source breakdown voltage	VGS = 0 V; ID = 1.44 mA	65			V
VGS(th)	gate-source threshold voltage	VDss = 10 V; ID = 144 mA	1.5	2.0	2.5	V
VGSq	gate-source quiescent voltage	VDss = 28 V; ID = 800 mA		2.2		V
IDSS	drain leakage current	VGS = 0 V; VDss = 32 V			2.8	µA
IDSX	drain cut-off current	VGS = VGS(th) + 3.75 V		26.5		A
IGSS	gate leakage current	VGS = 9 V; VDss = 0 V			280	nA
gfs	forward transconductance	VDss = 10 V; ID = 7.2 A		15.0		S
RDS(on)	drain-source on-state resistance	VGS = VGS(th) + 3.75 V; ID = 5.04 A		93	128	mΩ
Peak Device
V(BR)DSS	drain-source breakdown voltage	VGS = 0 V; ID = 2.98 mA	65			V
VGS(th)	gate-source threshold voltage	VDss = 10 V; ID = 298 mA	1.5	2.0	2.5	V
VGSq	gate-source quiescent voltage	VDss = 28 V; ID = 1600 mA		2.2		V
IDSS	drain leakage current	VGS = 0 V; VDss = 32 V			2.8	µA
IDSX	drain cut-off current	VGS = VGS(th) + 3.75 V		47		A
IGSS	gate leakage current	VGS = 11 V; VDss = 0 V			280	nA
gfs	forward transconductance	VDss = 10 V; ID = 14.9 A		28.5		S
RDS(on)	drain-source on-state resistance	VGS = VGS(th) + 3.75 V; ID = 10.43 A		50	74	mΩ

RF Characteristics

Test Signal: 1-Carrier W-CDMA; PAR = 9.6dB at 0.01% probability on the CCDF; 3GPP test model 1; 1 to 64DPCH; f1=2112.5MHz; f2=2167.5MHz; RF performance at VDss =28V; IDq =800mA (main); VGS(amp)peak =1.0V; Tcase =25℃; unless otherwise specified; in an asymmetrical Doherty production test circuit at frequencies from 2110MHz to 2200MHz.

TableCopy

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Gp	power gain	PL(AV) = 56 W	15.3	16.3		dB
RLin	input return loss	PL(AV)= 56 W	-	-14	-9	dB
ηD	drain efficiency	PL(Av) = 56 W	42	46		%
ACPR	adjacent channel power ratio	PL(AV) = 56 W	-	-29	-24	dBc

Test Signal: 1-Carrier W-CDMA; PAR = 9.6dB at 0.01% probability on the CCDF; 3GPP test model 1; 1 to 64DPCH; f1=2112.5MHz; f2=2167.5MHz; RF performance at VDss =28V; IDq =800mA (main); VGS(amp)peak =1.0V; Tcase =25℃; unless otherwise specified; in an asymmetrical Doherty production test circuit at a frequency of 2200MHz.

TableCopy

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
PARo	output peak-to-average ratio	PL(AV) = 56 W	6.3	6.9		dB
PL(M)	peak output power	PL(AV) = 56 W	380	440		W

Test Information

Ruggedness in Doherty Operation

The BLC10G22XS-400AVT can withstand a load mismatch corresponding to VSWR =10:1 through all phases under the following conditions: VDss=32V; IDq =800mA; VGS(amp)peak =1.0V;

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