onsemi BC857BDW1T1G

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  • Part Number:

    BC857BDW1T1G

  • Manufacturer:

    onsemi

  • Category:

    Single, Pre-Biased Bipolar Transistors

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf BC857BDW1T1G_Datesheet

  • Description:

    TRANS 2PNP 45V 0.1A SC88/SC70-6

  • In stock 21,566
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Specifications
Type
Paramete
Type
Paramete
Mounting Type
Surface Mount
Power - Max
380mW
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Package / Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
45V
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA, 5V
Grade
-
Qualification
-
Supplier Device Package
SC-88/SC70-6/SOT-363
Current - Collector Cutoff (Max)
15nA (ICBO)
Frequency - Transition
100MHz
Overview

BC857BDW1T1G Datasheet Summary

General Information

  • Part Number: BC857BDW1T1G
  • Manufacturer: onsemi
  • Series: Dual General Purpose PNP Transistors
  • Package Type: SOT-363/SC-88
  • Marking: Device Code "3F" followed by Date Code and Pb-Free indicator
  • Shipping: 3,000 per Tape & Reel

Features

  • Automotive and Special Applications: S Prefix for applications requiring unique site and control change requirements; AEC-Q101 Qualified and PPAP Capable
  • Environmental Compliance: Pb-Free, Halogen Free/BFR Free, RoHS Compliant

Maximum Ratings (TA = 25°C unless otherwise noted)

  • Collector-Emitter Voltage (VCEO): -45 V
  • Collector-Base Voltage (VCBO): -50 V
  • Emitter-Base Voltage (VEBO): -5.0 V
  • Collector Current (Continuous): -100 mA
  • Collector Current (Peak): -200 mA
  • Total Device Dissipation (Per Device, FR-5 Board): 380 mW (Derate 3.0 mW/°C above 25°C)
  • Thermal Resistance, Junction-to-Ambient (RθJA): 328 °C/W
  • Junction and Storage Temperature (TJ, Tstg): -55 to +150 °C

Electrical Characteristics (TA = 25°C unless otherwise noted)

  • OFF CHARACTERISTICSCollector-Emitter Breakdown Voltage (V(BR)CEO): -45 VCollector-Base Breakdown Voltage (V(BR)CBO): -50 VEmitter-Base Breakdown Voltage (V(BR)EBO): -5.0 VCollector Cutoff Current (ICBO): -15 nA (at VCB = -30 V, TA = 150°C)
  • ON CHARACTERISTICSDC Current Gain (hFE): 150 to 270 (varies with specific model and conditions)Collector-Emitter Saturation Voltage (VCE(sat)): -0.3 to -0.65 VBase-Emitter Saturation Voltage (VBE(sat)): -0.7 to -0.9 VBase-Emitter On Voltage (VBE(on)): -0.6 to -0.82 V
  • SMALL-SIGNAL CHARACTERISTICSCurrent-Gain - Bandwidth Product (fT): 100 MHzOutput Capacitance (Cob): 4.5 pFNoise Figure (NF): 10 dB
  • SWITCHING CHARACTERISTICSDelay Time (td): -35 nsRise Time (tr): -25 nsStorage Time (ts): -310 nsFall Time (tf): -40 ns

Ordering Information

  • Device Marking: 3F M � (where M = Date Code, � = Pb-Free Package)
  • Package: SOT-363 (Pb-Free)
  • Shipping Quantity: 3,000 per Tape & Reel
  • Additional Information: Refer to onsemi's Tape and Reel Packaging Specifications Brochure (BRD8011/D) for tape and reel specifications.

Mechanical and Packaging Information

  • Package Outline: SOT-363/SC-88
  • Dimensions: 2.00x1.25x0.90 mm
  • Pin Configuration: Style 1 (Pin 1: Emitter 2, Pin 2: Base 2, Pin 3: Collector 1, Pin 4: Emitter 1, Pin 5: Base 1, Pin 6: Collector 2)
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