BAW56LT3G Datasheet Summary

Basic Information

• Datasheet Version: Rev. 12
• Publication Order Number: BAW56LT1/D

Product Overview

The BAW56LT3G is a dual switching diode with a common anode, designed for surface-mount applications. It is suitable for automotive and other applications requiring unique site and control change requirements. The device is AEC-Q101 qualified and PPAP capable. It is also Pb-free, halogen-free/BFR free, and RoHS compliant.

Electrical Characteristics

Maximum Ratings (Each Diode)

• Reverse Voltage (VR): 70 V
• Forward Current (IF): 200 mA
• Forward Surge Current (60 Hz @ 1 cycle) (IFSM): 2.0 A
• Non-Repetitive Peak Forward Current (t = 1 µs) (IFSM): 4.0 A
• Repetitive Peak Forward Current Pulse (Wave = 1 sec, Duty Cycle = 66%) (IFRM): 500 mA

ESD Rating

• Human Body Model (HBM): Class 3A
• Machine Model (MM): Class M4
• Charged Device Model (CDM): Class C3

Thermal Characteristics

• Total Device Dissipation (FR-5 Board, TA = 25°C) (PD): 225 mW
• Derate above 25°C (mW/°C): 1.8
• Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W
• Total Device Dissipation (Alumina Substrate, TA = 25°C) (PD): 300 mW
• Derate above 25°C (mW/°C): 2.4
• Thermal Resistance, Junction-to-Ambient (RθJA): 417 °C/W
• Junction and Storage Temperature (TJ, Tstg): -55 to +150 °C

Electrical Characteristics (TA = 25°C unless otherwise noted) (Each Diode)

• Reverse Breakdown Voltage (I(BR) = 100 µA) (V(BR)): 70 V
• Reverse Voltage Leakage Current (VR = 25 V, TJ = 150°C) (IR): 30 µA
• Reverse Voltage Leakage Current (VR = 70 V) (IR): 2.5 µA
• Reverse Voltage Leakage Current (VR = 70 V, TJ = 150°C) (IR): 50 µA
• Diode Capacitance (VR = 0 V, f = 1.0 MHz) (CD): 2.0 pF
• Forward Voltage (IF = 1.0 mA) (VF): 715 mV
• Forward Voltage (IF = 10 mA) (VF): 855 mV
• Forward Voltage (IF = 50 mA) (VF): 1000 mV
• Forward Voltage (IF = 150 mA) (VF): 1250 mV
• Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) (trr): 6.0 ns

Mechanical Characteristics

• Package Type: SOT-23 (TO-236)
• Package Dimensions: 2.90x1.30x1.00 mm
• Pin Configuration:Pin 1: AnodePin 2: CathodePin 3: Cathode

Ordering Information

• Device Code: BAW56LT3G
• Package Type: SOT-23 (Pb-free)
• Shipping Quantity: 10,000 per tape & reel

Marking Diagram

• Device Code: A1M__
• Date Code: M
• Pb-free Package Indicator: __

Applications

• Signal processing
• High-speed switching
• Rectifying

Disclaimer

1. The information provided in the datasheet is believed to be accurate but is not guaranteed. No warranty or guarantee, expressed or implied, is made regarding the suitability of the product for any particular purpose.
2. The product is AEC-Q101 qualified and PPAP capable, suitable for automotive applications.
3. The product is Pb-free, halogen-free/BFR free, and RoHS compliant.
4. onsemi reserves the right to make changes without further notice to any products herein.
5. onsemi makes no warranty, representation, or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose.
6. onsemi does not convey any license under its patent rights nor the rights of others.
7. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.