BC847BPN Datasheet Summary

General Description

• Part Number: BC847BPN
• Manufacturer: Nexperia
• Type: 45 V, 100 mA NPN/PNP general-purpose transistor
• Package: SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package

Features and Benefits

• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and board space
• No mutual interference between the transistors

Applications

• General-purpose switching and amplification

Quick Reference Data

• Collector-Emitter Voltage (VCEO): 45 V
• Collector Current (IC): 100 mA
• DC Current Gain (hFE): 200 to 450 (VCE = 5 V; IC = 2 mA; Tamb = 25 °C)

Pinning Information

• Pin 1: E1 (Emitter TR1)
• Pin 2: B1 (Base TR1)
• Pin 3: C2 (Collector TR2)
• Pin 4: E2 (Emitter TR2)
• Pin 5: B2 (Base TR2)
• Pin 6: C1 (Collector TR1)

Ordering Information

• Package Type: TSSOP6 plastic, surface-mounted package
• Leads: 6
• Pitch: 0.65 mm
• Body Dimensions: 2.1 mm x 1.25 mm x 0.95 mm

Marking

• Type Number: BC847BPN
• Marking Code: 13% (where % is a placeholder for the manufacturing site code)

Limiting Values

• Collector-Base Voltage (VCBO): 50 V
• Collector-Emitter Voltage (VCEO): 45 V
• Emitter-Base Voltage (VEBO): 5 V
• Collector Current (IC): 100 mA
• Peak Collector Current (ICM): 200 mA
• Peak Base Current (IBM): 200 mA (single pulse; tp ≤ 1 ms)
• Total Power Dissipation (Ptot):Per transistor: 220 mW (Tamb ≤ 25 °C)Per device: 300 mW (Tamb ≤ 25 °C)
• Junction Temperature (Tj): 150 °C
• Ambient Temperature (Tamb): -65 to 150 °C
• Storage Temperature (Tstg): -65 to 150 °C

Thermal Characteristics

• Thermal Resistance (Rth(j-a)):Per transistor: 568 K/W (free air)Per device: 416 K/W (free air)
• Thermal Resistance (Rth(j-sp)): 230 K/W

Characteristics

• Collector-Base Breakdown Voltage (V(BR)CBO): 50 V (IC = 100 µA; IE = 0 A; Tamb = 25 °C)
• Collector-Emitter Breakdown Voltage (V(BR)CEO): 45 V (IC = 2 mA; IB = 0 A; Tamb = 25 °C)
• Emitter-Base Breakdown Voltage (V(BR)EBO): 5 V (IC = 0 A; IE = 100 µA; Tamb = 25 °C)
• Collector-Base Cut-off Current (ICBO):VCB = 30 V; IE = 0 A; Tamb = 25 °C: 15 nAVCB = 30 V; IE = 0 A; T = 150 °C: 5 µA
• Emitter-Base Cut-off Current (IEBO):VEB = 5 V; IC = 0 A; Tamb = 25 °C: 100 nA
• DC Current Gain (hFE):VCE = 5 V; IC = 2 mA; Tamb = 25 °C: 200 to 450
• Collector-Emitter Saturation Voltage (VCEsat):IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C: 100 mVIC = 100 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C: 300 mV
• Base-Emitter Saturation Voltage (VBEsat):IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C: 755 mV
• Base-Emitter Voltage (VBE):VCE = 5 V; IC = 2 mA; Tamb = 25 °C: 580 to 750 mV
• Collector Capacitance (Cc):VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 °C: 1.5 to 2.2 pF
• Emitter Capacitance (Ce):VEB = 0.5 V; IC = 0 A; f = 1 MHz; Tamb = 25 °C: 10 to 11 pF
• Transition Frequency (fT):VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C: 100 MHz

Package Outline

• Package Type: TSSOP6 (SOT363)
• Dimensions: Refer to Figure 16 in the datasheet for detailed dimensions in mm.

Soldering Information

• Reflow Soldering Footprint: Refer to Figure 17 in the datasheet for dimensions in mm.
• Wave Soldering Footprint: Refer to Figure 18 in the datasheet for dimensions in mm.

Revision History

• Version 5 (20220701):Changes:Product(s) changed to non-automotive qualification.Packing information removed.

Legal Information

• Data Sheet Status: Product data sheet
• Disclaimers:Nexperia reserves the right to make changes to the information published in this document at any time and without notice.Nexperia products are not designed, authorized, or warranted for use in life support, life-critical, or safety-critical systems or equipment.Customers are responsible for the design and operation of their applications and products using Nexperia products.