BAT54C Device Information Summary

Basic Information

• Manufacturer: ON Semiconductor (formerly Fairchild Semiconductor)
• Device Name: BAT54C
• Type: Schottky Diode

Ordering Information

• Part Number: BAT54C
• Top Mark: L43
• Package: SOT-23 3L
• Packing Method: 3k per Tape and Reel

Absolute Maximum Ratings (TA = 25°C)

• VRRM (Maximum Repetitive Reverse Voltage): 30 V
• IF(AV) (Average Rectified Forward Current): 200 mA
• IFSM (Non-Repetitive Peak Forward Surge Current): 600 mA (Pulse Width = 1.0 second)
• TSTG (Storage Temperature Range): -55 to +150 °C
• TJ (Operating Junction Temperature): -55 to +150 °C

Thermal Characteristics (TA = 25°C)

• PD (Power Dissipation): 290 mW
• RθJA (Thermal Resistance, Junction-to-Ambient): 430 °C/W

Electrical Characteristics (TA = 25°C)

• VR (Breakdown Voltage): 30 V (IR = 10 µA)
• VF (Forward Voltage)240 mV (IF = 0.1 mA)320 mV (IF = 1 mA)400 mV (IF = 10 mA)500 mV (IF = 30 mA)0.8 V (IF = 100 mA)
• IR (Reverse Leakage): 2 µA (VR = 25 V)
• CT (Total Capacitance): 10 pF (VR = 1 V, f = 1.0 MHz)
• trr (Reverse Recovery Time): 5.0 ns (IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω)

Marking and Connection Diagram

• Marking: L43
• Connection Diagram:Pin 1: AnodePin 2: CathodePin 3: NC (Not Connected)

Typical Performance Characteristics

• Forward Current vs. Forward Voltage: The forward voltage (VF) increases with increasing forward current (IF), ranging from 240 mV at 0.1 mA to 0.8 V at 100 mA.
• Reverse Current vs. Reverse Voltage: The reverse current (IR) increases with increasing reverse voltage (VR), with typical values ranging from 1 µA to 1000 µA over the VR range.
• Total Capacitance vs. Reverse Voltage: The total capacitance (CT) decreases slightly with increasing reverse voltage (VR), typically around 10 pF.

Additional Notes

• The device is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.