Diotec Semiconductor BAT54S

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  • Part Number:

    BAT54S

  • Manufacturer:

    Diotec Semiconductor

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf BAT54S_Datesheet

  • Description:

    DIODE ARR SCHOTT 30V 200MA SOT23

  • In stock 7,075
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Specifications
Type
Paramete
Type
Paramete
Operating Temperature - Junction
-55°C ~ 150°C
Supplier Device Package
SOT-23-3 (TO-236)
Technology
Schottky
Voltage - Forward (Vf) (Max) @ If
1 V @ 100 mA
Reverse Recovery Time (trr)
5 ns
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
2 µA @ 25 V
Voltage - DC Reverse (Vr) (Max)
30 V
Grade
-
Mounting Type
Surface Mount
Current - Average Rectified (Io) (per Diode)
200mA
Package / Case
TO-236-3, SC-59, SOT-23-3
Diode Configuration
1 Pair Series Connection
Qualification
-
Overview

BAT54S Schottky Diode Datasheet Summary

General Description

The BAT54S is a Schottky diode designed for high-frequency rectification and switching applications. It is available in the SOT-23 package, making it suitable for compact designs. This diode is part of the BAT54 series, which includes variants such as BAT54, BAT54A, BAT54C, and BAT54S, each with specific characteristics to meet different application requirements.

Ordering Information

  • Part Number: BAT54S
  • Top Mark: L44
  • Package: SOT-23 3L
  • Packing Method: 3,000 per Tape and Reel
  • Alternative Packaging: BAT54S_D87Z (10,000 per Tape and Reel)

Absolute Maximum Ratings

  • Maximum Repetitive Reverse Voltage (VRRM): 30 V
  • Average Rectified Forward Current (IF(AV)): 200 mA
  • Non-Repetitive Peak Forward Surge Current (IFSM): 600 mA (Pulse Width = 1.0 second)
  • Storage Temperature Range (TSTG): -55°C to +150°C
  • Operating Junction Temperature (TJ): -55°C to +150°C

Electrical Characteristics (at TA = 25°C)

  • Breakdown Voltage (VR): 30 V (IR = 10 µA)
  • Forward Voltage (VF):240 mV at IF = 0.1 mA320 mV at IF = 1 mA400 mV at IF = 10 mA500 mV at IF = 30 mA0.8 V at IF = 100 mA
  • Reverse Leakage Current (IR): 2 µA at VR = 25 V
  • Total Capacitance (CT): 10 pF (VR = 1 V, f = 1.0 MHz)
  • Reverse Recovery Time (trr): 5.0 ns (IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω)

Thermal Characteristics (at TA = 25°C)

  • Power Dissipation (PD): 290 mW
  • Thermal Resistance, Junction-to-Ambient (RθJA): 430 °C/W

Typical Performance Characteristics

  • Forward Current vs. Forward Voltage: Refer to Figure 1.
  • Reverse Current vs. Reverse Voltage: Refer to Figure 2.
  • Total Capacitance vs. Reverse Voltage: Refer to Figure 3.

Marking and Connection Diagram

  • Marking: BAT54S
  • Connection Diagram:Pin 1: AnodePin 2: CathodePin 3: NC (No Connection)
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