Diotec Semiconductor BAW56

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  • Part Number:

    BAW56

  • Manufacturer:

    Diotec Semiconductor

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf BAW56_Datesheet

  • Description:

    DIODE ARRAY GP 75V 215MA SOT23-3

  • In stock 7,910
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Specifications
Type
Paramete
Type
Paramete
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature - Junction
-55°C ~ 150°C
Grade
-
Diode Configuration
1 Pair Common Anode
Qualification
-
Supplier Device Package
SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max)
75 V
Current - Average Rectified (Io) (per Diode)
215mA
Reverse Recovery Time (trr)
4 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Technology
Standard
Voltage - Forward (Vf) (Max) @ If
1.25 V @ 150 mA
Current - Reverse Leakage @ Vr
1 µA @ 75 V
Mounting Type
Surface Mount
Overview

BAW56 Small Signal Diode

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

  • VRRM: Maximum Repetitive Reverse Voltage - 85 V
  • IF(AV): Average Rectified Forward Current - 200 mA
  • IFSM: Non-repetitive Peak Forward Surge CurrentPulse Width = 1.0 second - 1.0 APulse Width = 1.0 microsecond - 2.0 A
  • Tstg: Storage Temperature Range - -55 to +150 °C
  • TJ: Operating Junction Temperature - 150 °C
  • PD: Power Dissipation - 350 mW
  • RθJA: Thermal Resistance, Junction to Ambient - 357 °C/W
  • Electrical Characteristics (TA = 25°C unless otherwise noted)
  • VR: Breakdown Voltage (IR = 5.0 µA) - 85 V
  • VF: Forward VoltageIF = 1.0 mA - 715 mVIF = 10 mA - 855 mVIF = 50 mA - 1.0 VIF = 150 mA - 1.25 V
  • IR: Reverse CurrentVR = 70 V - 2.5 µAVR = 25 V, TA = 150°C - 30 µAVR = 70 V, TA = 150°C - 50 µA
  • CT: Total Capacitance (VR = 0, f = 1.0 MHz) - 2.0 pF
  • trr: Reverse Recovery Time (IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Ω) - 6.0 ns
  • Connection Diagram
  • Package: SOT-23
  • Pin Configuration:123
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