Toshiba Semiconductor and Storage CMH08(TE12L,Q,M)

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CMH08(TE12L,Q,M)

View All Single Diodes by Toshiba Semiconductor and Storage

View All Single Diodes by Toshiba Semiconductor and Storage

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Specifications
Type
Paramete
Type
Paramete
Mounting Type
Surface Mount
Capacitance @ Vr, F
-
Operating Temperature - Junction
-40°C ~ 150°C
Reverse Recovery Time (trr)
100 ns
Voltage - DC Reverse (Vr) (Max)
400 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Package / Case
SOD-128
Technology
Standard
Grade
-
Supplier Device Package
M-FLAT (2.4x3.8)
Voltage - Forward (Vf) (Max) @ If
1.3 V @ 2 A
Current - Average Rectified (Io)
2A
Qualification
-
Current - Reverse Leakage @ Vr
10 µA @ 400 V
Overview

DESCRIPTION

· High Efficiency Rectifier Silicon Epitaxial Type CMH08

· Manufactured by TOSHIBA

· Start of commercial production: December 2002



FEATURES

· Repetitive peak reverse voltage: 400 V

· Average forward current: 2.0 A

· Low forward voltage: 1.3 V (Max.)

· Very fast reverse recovery time: 50 ns (Max.)

· Compact assembly with small surface-mount package "M−FLATTM"



APPLICATIONS

· Switching Mode Power Supply



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