DESCRIPTION

· The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits.
· Each NV SRAM includes a self-contained lithium energy source and control circuitry to monitor VCC for out-of-tolerance conditions.
· Automatically switches to the lithium energy source and enables write protection during power loss to prevent data corruption.
· Directly replaces 8k x 8 SRAMs, conforming to the 28-pin DIP standard, and matches the pinout of 2764 EPROM and 2864 EEPROM.
· No limit on write cycles and no additional support circuitry required for microprocessor interfacing.

FEATURES

· Minimum 10-year data retention without external power.
· Automatic data protection during power loss.
· Unlimited write cycles.
· Low-power CMOS technology.
· JEDEC standard 28-pin DIP package.
· 70 ns read and write access times.
· Lithium energy source remains disconnected until first power application.
· Full ±10% VCC operating range (DS1225AD) and optional ±5% VCC range (DS1225AB).
· Optional industrial temperature range of -40°C to +85°C.

APPLICATIONS

· Direct replacement for 8k x 8 volatile static RAM or EEPROM.
· Suitable for systems requiring nonvolatile memory with high reliability and performance.
· Ideal for industrial environments with extended temperature ranges.