DESCRIPTION

· The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits.
· Each NV SRAM has a self-contained lithium energy source and control circuitry that monitors VCC for out-of-tolerance conditions.
· Automatically switches to lithium energy source and enables write protection during power loss to prevent data corruption.
· Directly replaces 8k x 8 SRAMs, conforming to the 28-pin DIP standard, and matches the pinout of 2764 EPROM and 2864 EEPROM.
· Unlimited write cycles and no additional support circuitry required for microprocessor interfacing.

FEATURES

· 10 years minimum data retention without external power.
· Automatic data protection during power loss.
· Direct replacement for 8k x 8 volatile static RAM or EEPROM.
· Unlimited write cycles and low-power CMOS.
· JEDEC standard 28-pin DIP package.
· Read and write access times of 70 ns.
· Lithium energy source disconnected until first power application.
· Full ±10% VCC operating range (DS1225AD) and optional ±5% VCC range (DS1225AB).
· Optional industrial temperature range of -40°C to +85°C.

APPLICATIONS

· Ideal for applications requiring nonvolatile memory with high reliability and long data retention.
· Suitable for direct replacement in systems using 8k x 8 SRAMs, 2764 EPROMs, or 2864 EEPROMs.
· Enhances performance in microprocessor-based systems without additional support circuitry.