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Toshiba Semiconductor and Storage DSF01S30SC,L3F
- Part Number:
DSF01S30SC,L3F
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- RoHs:
RoHS Compliant - Datasheet:
DSF01S30SC,L3F_Datesheet - Description:
DIODE SCHOTTKY 30V 100MA SC2
- In stock 0
DESCRIPTION
· Silicon Epitaxial Schottky Barrier Diode designed for high-speed switching applications.
· Part number: DSF01S30SC, manufactured by Toshiba.
· Start of commercial production: May 2009.
FEATURES
· Reverse voltage (VR): 30V.
· Average forward current (IO): 100mA (mounted on FR4 board).
· Surge current (IFSM): 2A for 10ms.
· Junction temperature (Tj): up to 125°C.
· Storage temperature range (Tstg): -55°C to 125°C.
· Low forward voltage: 0.27V (typ.) at IF = 10mA, 0.41V (typ.) at IF = 100mA.
· Reverse current: 7μA (max.) at VR = 10V, 50μA (max.) at VR = 30V.
· Total capacitance (CT): 9.3pF (typ.) at VR = 0V, f = 1MHz.
· Compact size: 0.17mg (typ.) weight, dimensions specified in datasheet.
APPLICATIONS
· High-speed switching circuits.
· Power supply and voltage regulation systems.
· Protection circuits in electronic devices.
· Suitable for applications requiring low forward voltage and fast switching.
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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage