Good-Ark Semiconductor GSBCP51-16

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Specifications
Type
Paramete
Type
Paramete
Voltage - Collector Emitter Breakdown (Max)
45 V
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Grade
-
Power - Max
1.5 W
Qualification
-
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector (Ic) (Max)
1 A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V
Supplier Device Package
SOT-223
Frequency - Transition
100MHz
Current - Collector Cutoff (Max)
100nA (ICBO)
Operating Temperature
-
Overview

DESCRIPTION



· The GSBCP51-52-53 series are PNP transistors designed for audio frequency (AF) driver and output stages.

· These transistors are available in SOT-223 package with pin configuration: 1.BASE, 2.COLLECTOR, 3.EMITTER.

· Complementary NPN types: GSBCP54, GSBCP55, GSBCP56.



FEATURES



· High collector current capability.

· Low collector-emitter saturation voltage.

· Collector-Base Voltage (VCBO): -45V to -100V.

· Collector-Emitter Voltage (VCEO): -45V to -80V.

· Emitter-Base Voltage (VEBO): -5V.

· DC Current Gain (hFE): 25 to 250.

· Transition Frequency (fT): 100 MHz.



APPLICATIONS



· Audio frequency (AF) driver stages.

· Output stages in audio amplifiers.

· General-purpose amplification circuits.

· Complementary push-pull configurations.



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