Good-Ark Semiconductor BC846B

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Specifications
Type
Paramete
Type
Paramete
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65 V
Current - Collector (Ic) (Max)
100 mA
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA, 5V
Qualification
-
Grade
-
Mounting Type
Surface Mount
Power - Max
350 mW
Transistor Type
NPN
Current - Collector Cutoff (Max)
15nA (ICBO)
Frequency - Transition
300MHz
Package / Case
TO-236-3, SC-59, SOT-23-3
Overview

BC846B Datasheet Summary

Basic Information

  • Datasheet Version: Doc.USBC846XxSX5.1
  • Publication Date: Dec. 2023

Product Overview

The BC846B is an NPN transistor designed for surface-mount applications, ideally suited for automatic insertion. It is part of the BC846x series and is RoHS compliant. The complementary PNP types are available in the BC856x series. The device is suitable for switching and RF amplifier applications.

Electrical Characteristics

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

  • Collector-Base Voltage (VCBO): 80 V
  • Collector-Emitter Voltage (VCEO): 65 V
  • Emitter-Base Voltage (VEBO): 6 V
  • Peak Collector Current (ICM): 200 mA
  • Collector Power Dissipation (PC): 200 mW
  • Storage Temperature Range (TSTG): -55°C to +150°C
  • Operating Junction Temperature Range (TJ): -55°C to +150°C
  • Collector Current (Continuous) (IC): 100 mA
  • Thermal Resistance, Junction-to-Ambient (RθJA): 410 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

  • Collector-Base Cut-Off Current (ICBO): 15 nA (VCB = 30 V, IE = 0)
  • Emitter-Base Cut-Off Current (IEBO): 100 nA (VEB = 5 V, IC = 0)
  • DC Current Gain (hFE): 200 to 450BC846B: 200 to 450
  • Collector-Emitter Saturation Voltage (VCE(sat)):0.2 V to 0.6 V (IC = 100 mA, IB = 5.0 mA)
  • Base-Emitter Saturation Voltage (VBE(sat)):0.75 V (IC = 10 mA, IB = 0.5 mA)0.9 V (IC = 100 mA, IB = 5.0 mA)
  • Base-Emitter Voltage (VBE):0.58 V to 0.7 V (VCE = 5 V, IC = 2.0 mA)0.75 V (VCE = 5 V, IC = 10 mA)
  • Transition Frequency (fT): 100 MHz (VCE = 5 V, IC = 10 mA, F = 100 MHz)
  • Collector Output Capacitance (Cob): 2.5 pF to 4.5 pF (VCB = 10 V, IE = 0, F = 1 MHz)

Mechanical Characteristics

Package Outline Dimensions (SOT-23)

TableCopy


SymbolDimensions In MillimetersDimensions In Inches
A0.900 - 1.1500.035 - 0.045
A10.000 - 0.1000.000 - 0.004
A20.900 - 1.0500.035 - 0.041
b0.300 - 0.5000.012 - 0.020
c0.080 - 0.1500.003 - 0.006
D2.800 - 3.0000.110 - 0.118
E1.200 - 1.4000.047 - 0.055
E12.250 - 2.5500.089 - 0.100
e1.800 - 2.0000.071 - 0.079
L0.300 - 0.5000.012 - 0.020
L10.550 REF0.022 REF
θ0° - 8°0° - 8°

Recommended Pad Layout

  • Controlling dimensions: in millimeters
  • General tolerance: ±0.05 mm
  • The pad layout is for reference purposes only.

Ordering Information

  • Marking Code: H1B
  • Package Type: SOT-23

Applications

  • Switching
  • RF amplifier applications


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