Good-Ark Semiconductor GSBCP56-16

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Specifications
Type
Paramete
Type
Paramete
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V
Transistor Type
NPN
Qualification
-
Current - Collector (Ic) (Max)
1 A
Frequency - Transition
100MHz
Package / Case
TO-261-4, TO-261AA
Grade
-
Mounting Type
Surface Mount
Operating Temperature
-
Power - Max
1.5 W
Supplier Device Package
SOT-223
Voltage - Collector Emitter Breakdown (Max)
80 V
Current - Collector Cutoff (Max)
100nA (ICBO)
Overview

DESCRIPTION



· The GSBCP54-55-56 series are NPN transistors designed for AF driver and output stages.



FEATURES



· High collector current capability.

· Low collector-emitter saturation voltage.

· Complementary PNP types available: GSBCP51/GSBCP52/GSBCP53.

· Collector-Base Voltage (VCBO): 45V, 60V, 100V.

· Collector-Emitter Voltage (VCEO): 45V, 60V, 80V.

· Collector Current (IC): Continuous.

· Collector Power Dissipation (PC): Specified.

· Thermal Resistance (RθJA): Specified.

· Storage Temperature Range (TSTG): -65°C to +150°C.



APPLICATIONS



· Suitable for AF driver and output stages in audio applications.

· Ideal for circuits requiring high current and low saturation voltage.

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