Good-Ark Semiconductor GSFU60R190

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  • Part Number:

    GSFU60R190

  • Manufacturer:

    Good-Ark Semiconductor

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf GSFU60R190_Datesheet

  • Description:

    MOSFET, N-CH, SINGLE, 20.00A, 60

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Power Dissipation (Max)
45W (Tc)
Vgs(th) (Max) @ Id
4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-220F
Technology
MOSFET (Metal Oxide)
Package / Case
TO-220-3 Full Pack
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1174 pF @ 100 V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Grade
-
FET Feature
-
Vgs (Max)
±30V
Overview

DESCRIPTION

· The GSFU60R190 is a 600V N-Channel MOSFET designed using advanced MOSFET process technology.

· It features high cell density and low on-resistance, making it highly efficient and reliable for various applications.



FEATURES

· Advanced MOSFET process technology ensures high efficiency and reliability.

· Low on-resistance (0.19Ω max) with low gate charge for reduced power loss.

· Fast switching and reverse body recovery for improved performance.

· High drain-source voltage (600V) and gate-source voltage (±30V) tolerance.

· Rugged design with high dv/dt capability (15-50V/ns).



APPLICATIONS

· Ideal for high-efficiency switched-mode power supplies (SMPS).

· Suitable for a wide range of power management and conversion applications.

· Used in systems requiring high reliability and efficiency, such as industrial and automotive electronics.



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