Good-Ark Semiconductor GSGP9R115

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  • Part Number:

    GSGP9R115

  • Manufacturer:

    Good-Ark Semiconductor

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf GSGP9R115_Datesheet

  • Description:

    MOSFET, N-CH, SINGLE, 87.00A, 15

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Technology
MOSFET (Metal Oxide)
Grade
-
Drain to Source Voltage (Vdss)
150 V
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs(th) (Max) @ Id
4.6V @ 250µA
Rds On (Max) @ Id, Vgs
9.1mOhm @ 42A, 10V
FET Type
N-Channel
Supplier Device Package
8-PPAK (5.1x5.86)
Input Capacitance (Ciss) (Max) @ Vds
2808 pF @ 75 V
Qualification
-
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
87A (Tc)
Mounting Type
Surface Mount
Power Dissipation (Max)
142W (Tc)
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Overview

DESCRIPTION



· The GSGP9R115 is a 150V N-Channel MOSFET designed for high efficiency and reliability.

· Utilizes advanced MOSFET process technology for high cell density and low on-resistance.



FEATURES



· Advanced MOSFET process technology ensures optimal performance.

· Low on-resistance (9.1mΩ max) combined with low gate charge for efficient operation.

· Fast switching and reverse body recovery enhance overall efficiency.



APPLICATIONS



· Ideal for high efficiency switched mode power supplies.

· Suitable for a wide variety of applications requiring reliable and efficient power management.

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