Good-Ark Semiconductor GSGT5R585

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  • Part Number:

    GSGT5R585

  • Manufacturer:

    Good-Ark Semiconductor

  • Category:

    Single FETs, MOSFETs

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf GSGT5R585_Datesheet

  • Description:

    MOSFET, N-CH, SINGLE, 120.00A, 8

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Current - Continuous Drain (Id) @ 25°C
120A (Ta)
Power Dissipation (Max)
160W (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Qualification
-
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Grade
-
Input Capacitance (Ciss) (Max) @ Vds
4284 pF @ 40 V
Drain to Source Voltage (Vdss)
85 V
FET Feature
-
Supplier Device Package
TO-263 (D2PAK)
Vgs (Max)
±20V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 50A, 10V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Overview

DESCRIPTION



· The GSGT5R585 is an 85V N-Channel MOSFET utilizing advanced process technology for high cell density and low on-resistance.

· Designed for high efficiency and reliability in switch mode power supplies and various applications.



FEATURES



· Advanced MOSFET process technology ensures optimal performance.

· Low on-resistance combined with low gate charge enhances efficiency.

· Fast switching and reverse body recovery capabilities.



APPLICATIONS



· Ideal for high efficiency switched mode power supplies.

· Suitable for a wide range of applications requiring reliable power management.



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