Toshiba Semiconductor and Storage GT10J312(Q)

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GT10J312(Q)

View All Single IGBTs by Toshiba Semiconductor and Storage

View All Single IGBTs by Toshiba Semiconductor and Storage

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Specifications
Type
Paramete
Type
Paramete
IGBT Type
-
Td (on/off) @ 25°C
400ns/400ns
Supplier Device Package
-
Mounting Type
Through Hole
Reverse Recovery Time (trr)
200 ns
Current - Collector Pulsed (Icm)
20 A
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Test Condition
300V, 10A, 100Ohm, 15V
Qualification
-
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max)
600 V
Power - Max
60 W
Operating Temperature
150°C (TJ)
Current - Collector (Ic) (Max)
10 A
Switching Energy
-
Gate Charge
-
Input Type
Standard
Grade
-
Overview

DESCRIPTION

· GT10J312 and GT10J312(SM) are N-channel IGBTs designed by Toshiba for high power switching and motor control applications.



FEATURES

· Third-generation IGBT with enhancement mode type.

· High-speed switching with a maximum fall time of 0.30μs.

· Low saturation voltage, VCE(sat) maximum of 2.7V.

· Includes a Fast Recovery Diode (FRD) between emitter and collector.



APPLICATIONS

· Suitable for high power switching applications.

· Ideal for motor control applications.



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