Toshiba Semiconductor and Storage GT40RR21(STA1,E

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GT40RR21(STA1,E

View All Single IGBTs by Toshiba Semiconductor and Storage

View All Single IGBTs by Toshiba Semiconductor and Storage

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Specifications
Type
Paramete
Type
Paramete
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 40A
Td (on/off) @ 25°C
-
Test Condition
280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr)
600 ns
Qualification
-
Current - Collector Pulsed (Icm)
200 A
Grade
-
IGBT Type
-
Power - Max
230 W
Input Type
Standard
Package / Case
TO-3P-3, SC-65-3
Switching Energy
-, 540µJ (off)
Voltage - Collector Emitter Breakdown (Max)
1200 V
Gate Charge
-
Mounting Type
Through Hole
Operating Temperature
175°C (TJ)
Supplier Device Package
TO-3P(N)
Current - Collector (Ic) (Max)
40 A
Overview

DESCRIPTION



· GT40RR21 is a Silicon N-Channel IGBT, start of commercial production in 2012-04.



FEATURES



· 6.5th generation technology.

· RC-IGBT with monolithically integrated freewheeling diode.

· Enhancement mode operation.

· High-speed switching: t f = 0.21 µs (typ.) at I C = 40 A, FWD: t rr = 0.60 µs (typ.) at I F = 15 A.

· Low saturation voltage: V CE(sat) = 2.05 V (typ.) at I C = 40 A.

· High junction temperature: T j = 175°C (max).



APPLICATIONS



· Dedicated to Voltage-Resonant Inverter Switching Applications.

· Not suitable for other applications.

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