DESCRIPTION

· The LMG352xR030 GaN FET integrates a driver and protection features, targeting switch-mode power converters for enhanced power density and efficiency.
· Features a silicon driver enabling switching speeds up to 150V/ns and includes a zero-voltage detection (ZVD) feature in the LMG3526R030 model.
· Offers advanced power management with digital temperature reporting and fault detection capabilities.

FEATURES

· 650V GaN-on-Si FET with integrated high precision gate bias voltage and operates from a 7.5V to 18V supply.
· Robust protection includes cycle-by-cycle overcurrent, latched short-circuit protection, and self-protection from internal overtemperature and UVLO monitoring.
· Adjustable gate drive strength from 20V/ns to 150V/ns for optimized switching performance and EMI mitigation.

APPLICATIONS

· Ideal for switch-mode power converters, merchant network and server PSUs, and merchant telecom rectifiers.
· Suitable for solar inverters, industrial motor drives, and uninterruptible power supplies.